A1lnGaP LED having reduced temperature dependence

ABSTRACT

To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.

FIELD OF THE INVENTION

This invention relates to light emitting diodes (LEDs) and, inparticular, to a technique for forming AlInGaP LEDs whose visible lightoutput has a reduced temperature dependence.

BACKGROUND

(Al_(x)Ga_(1-x))_(1-y)In_(y)P LEDs are used to produce visiblewavelengths from red to amber. AlInGaP LEDs are typically formed bygrowing epitaxial layers, including p-type and n-type layers sandwichinga light-emitting active layer, on a GaAs growth substrate. High qualityternary and quaternary substrates are very difficult to fabricate, soGaAs substrates are commonly used. To produce low-defect LED layers, thelattice constant of the (Al_(x)Ga_(1-x))_(x-y)In_(y)P epitaxial layersmust match the lattice constant of the GaAs. To match the GaAs latticeconstant, y=0.48. The x value is adjusted to achieve the desiredemission wavelength.

The light output of AlInGaP LEDs is highly dependent on temperature. Forexample, at temperatures in the range of 80-120 degrees C, the internalquantum efficiency at useful wavelengths is significantly reduced,resulting in a light output of two-thirds to one-half of the lightoutput at room temperature. This variation in light output is extremelysignificant in certain applications such as traffic lights, tail lights,and displays.

What is needed is a technique to reduce the temperature sensitivity ofAlInGaP LEDs.

SUMMARY

It has been discovered by the Applicants that AlInGaP LEDs have areduced temperature sensitivity if the lattice constant of the AlInGaPactive layer is greater than that of GaAs. The lattice constant may beincreased by increasing the percentage of indium. Increasing the latticeconstant increases the percentage of direct band gap (vs. indirect bandgap) recombination, thus increasing quantum efficiency. However, onlyGaAs and Ge are practical growth substrates for AlInGaP LEDs, eachhaving a similar lattice constant, approximately 5.65 Å.

To increase the lattice constant of the AlInGaP layers, an engineeredgrowth layer is formed over a substrate, where the growth layer has alattice constant equal to or approximately equal to the desired AlInGaPepitaxial layers for the light emitting device. In one embodiment, thegrowth layer has a composition of (Al_(x)Ga_(1-x))_(1-y)In_(y)P, where0≦x≦1.0, and y>0.48.

In one embodiment, a graded InGaAs or, InGaP layer is grown over a GaAsor Ge substrate. The amount of indium is increased during growth of thelayer such that the final lattice constant is equal to that for thedesired bandgap properties in the AlInGaP active layers. By grading theInGaAs or InGaP layer, the residual strain is relatively low, resultingin an acceptable dislocation density (e.g., <10E6/cm²).

A thick (˜5 to 100 um) transparent window layer, for example GaP, AlGaP,or AlGaAs, may be grown above the AlInGaP active LED layers. This layerprovides increased light extraction and current spreading for the LEDdevices. The resulting wafer may be metallized and diced, and mountedinto packages, to provide operating LEDs. Alternatively, adistributed-Bragg-reflector (DBR) epitaxial layer stack, for exampleAlGaAs/AlGaAs, may be grown between the absorbing buffer layers and theLED active region, to reflect downward light towards the top surface ofthe chip, to increase LED brightness.

In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer isgrown on a GaAs or Ge growth substrate, where the InGaP, InGaAs, orAlInGaP layer is fully strained (compressed) and free of additionaldislocations caused by the heteroepitaxy. Hydrogen ions are implantedinto the top surface of the growth substrate. The wafer is then bondedto an oxide bonding layer grown on a carrier substrate, which may be Si,Ge, GaAs, or other semiconductor, ceramic or metal, or alloys thereof.The resulting structure is heated, forming hydrogen bubbles thatdelaminate the InGaP, InGaAs, or AlInGaP layer from the growthsubstrate. The InGaP, InGaAs, or AlInGaP layer then relaxes so that itslattice constant increases. The oxide bonding layer is optional if thewafer bond allows the strained layer to expand. The indium content isselected such that the released InGaP, InGaAs, or AlInGaP layer has thesame lattice constant as the desired overlying AlInGaP epitaxial layers.The AlInGaP LED layers are then grown over the relaxed InGaP, InGaAs, orAlInGaP layer. Subsequently, the LED layers may be bonded to a finalhost substrate or package element, and the carrier substrate and oxidelayer are removed, for example, by etching or lapping, or anycombination thereof. Light extraction features, such as shapes ortexturing (either random or ordered), or a photonic crystal structure,may be applied to the top surface of the LED structure. Electricalcontacts are made to the LED layers, and the wafer is diced. Theresulting chips are mounted into packages to provide operating LEDs. Thesame device fabrication method could be applied to the technique ofusing InGaP or InGaAs graded buffer layers, described above.

Alternatively, a thick (˜5 to 100 um) transparent window layer, forexample GaP, AlGaP, or AlGaAs, may be grown above the AlInGaP LEDlayers. Then, the carrier substrate and oxide layer may be removed, withmechanical support for the remaining structure provided by the thickwindow layer. The resulting structure may be bonded to a conductive,transparent substrate, such as GaP using elevated temperature andpressure. The wafer bonding conditions may be chosen so that the bondedinterface provides both good electrical conductivity as well as opticaltransparency. The resulting wafer may be metallized and diced, andmounted into packages, to provide fully transparent LEDs. The samedevice fabrication method could be applied to the technique of usingInGaP or InGaAs graded buffer layers.

Accordingly, Applicants have invented an AlInGaP LED with base LEDepitaxial layers having an enlarged lattice constant. The enlargedlattice constant desirably affects the properties of the AlInGaP activelayer. The AlInGaP active layer may even have a composition such that itis stressed or strained, since its lattice constant is constrained tothe enlarged lattice constant of the epitaxial growth layers. The activelayer may be multiple layers including quantum wells.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are diagrams showing examples of a conduction band edgeand valence band edge that provides a direct band gap for efficientlyproducing light.

FIG. 2 is a cross-sectional view of an AlInGaP LED having an enlargedlattice constant formed by engineering a growth layer having a latticeconstant greater than that of GaAs and equal to the lattice constant ofthe desired AlInGaP layers.

FIG. 3 is a diagram showing the reduced temperature dependence of a(Al_(x)Ga_(1-x))_(1-y)In_(y)P LED when y has been increased from 0.48(matched to GaAs) to 0.53.

FIG. 4 is a diagram of lattice constant vs. energy gap for varioussubstrates, including GaAs, illustrating the Applicants' desiredincrease in the lattice constant of AlInGaP LED layers from 5.65angstroms (the lattice constant of GaAs) to between 5.65 and 5.73 Å toreduce the temperature sensitivity of the AlInGaP LED.

FIG. 5 is a cross-sectional view of an AlInGaP LED having an enlargedlattice constant grown over a graded InGaAs or InGaP layer.

FIGS. 6A-6F are cross-sectional views of an LED structure at variousstages of manufacture when forming an engineered growth layer, having alattice constant larger than the lattice constant of GaAs, and growingAlInGaP epitaxial layers on the growth layer.

FIGS. 7A-7B are cross-sectional views of another LED structure atvarious stages of manufacture where a thick top window is formed (afterthe step of FIG. 6F), and the light absorbing carrier substrate (e.g.,silicon), along with other layers, are removed and optionally replacedwith a transparent substrate.

FIGS. 8A-8B are cross-sectional views of another LED structure atvarious stages of manufacture where a reflector (e.g., metal mirror orBragg reflector) and support substrate are bonded over the p-layers, andthe light absorbing carrier substrate (e.g., silicon), along with otherlayers, are removed.

FIGS. 9A-9C are cross-sectional views of another LED structure atvarious stages of manufacture where the device is formed as a flip chip,with the light absorbing carrier substrate (e.g., silicon) and otherlayers removed, and the top surface of the chip further processed (e.g.,roughened) to for light extraction features.

FIG. 10 is an exploded view of one embodiment of a package for theresulting LED.

DETAILED DESCRIPTION

In direct band gap semiconductors, light can be efficiently generatedbecause the maximum energy level in the valence band and the minimumenergy level in the conduction band occur at the same k-vector. FIG. 1Ais a simplified representation of energy vs. k-vector for a direct bandgap semiconductor material, where the valence band maximum has the samek-vector as the conduction band minimum. In reality, the energy vs.k-vector curves are not as simple. FIG. 1B is an energy vs. k-vectordiagram for a direct band gap zinc blende semiconductor showing a directband gap minimum (Γ) and indirect band gap minima (L and X) for theconduction band. The F minimum must be at a lower energy than the L or Xminima for an electron to efficiently cross the gap between the valenceband and the conduction band to create a direct band gap transition andproduce light. If the X or L minima were at an energy level lower thanthe Γ energy level, an increased carrier population would be involved inan indirect band gap transition and not produce light.

Applicants have discovered the following three reasons for the poorthermal performance of an (Al_(x)Ga_(1-x))_(1-y)In_(y)P LED, wherey=0.48 to match the lattice constant of the GaAs growth substrate:

-   -   1. The carrier population at the L minimum increases with        temperature, causing fewer electrons to be involved in direct        band gap transitions;    -   2. There is increased electron leakage with increasing        temperature from the AlInGaP active layer over the relatively        shallow conduction band barrier provided by the p-type AlInP:Mg        upper confining layer; and    -   3. There is a reduced percentage of radiative recombination with        increasing temperature due to increased nonradiative        Hall-Shockley-Reed recombination, which is more active at        elevated temperatures.

Applicants have determined that reason #1 above dominates thetemperature sensitivity. Each of the above problems is exacerbated asthe Al content (i.e., x) of the active layer increases. Increasing x isnecessary to shorten the emission wavelengths from 650 nm (deep red) to560 nm (yellow/green). Further, a higher Al content is needed forefficient photometric operation at elevated temperatures, since thermallattice expansion leads to a significant red-shift in emission peakwavelength (˜0.1-0.2 nm/K).

Applicants have analyzed the carrier concentration and distribution,emission wavelength, quantum efficiency, and temperature dependence of(Al_(x)Ga_(1-x))_(1-y)In_(y)P LEDs for different lattice constants anddiscovered that a small energy separation between the F and L minima(˜110 meV) for this material system causes the L minima to dominate thetemperature dependence of red (˜630 nm) LEDs. In other words, a highelectron population in the indirect L minima is the dominant factor inthe temperature dependence of (Al_(x)Ga_(1-x))_(1-y)In_(y)P LEDs.

Accordingly, Applicants sought a way to increase the energy separationbetween the Γ and L minima in the active region to reduce the percentageof indirect band gap transitions with increasing temperature and thusreduce the temperature dependence of (Al_(x)Ga_(1-x))_(1-y)In_(y)P LEDs.

Applicants have discovered that an enlarged-lattice constant AlInGaPactive layer substantially reduces the temperature dependence of the LEDby increasing the energy separation between the Γ and L minima. Aspreviously mentioned, y in conventional LEDs is set to 0.48 in order forthe material to match the lattice constant of the GaAs growth substrateso as to have relatively few dislocation defects. A higher value of ywould result in the LED material grown on the GaAs substrate to have anunacceptably high density of dislocations.

In one embodiment of the invention, Applicants form an LED usingepitaxial layers of (Al_(x)Ga_(1-x))_(1-y)In_(y)P, where y=0.53, whichhas a lattice constant greater than GaAs. To achieve the target redemission (˜630 nm), an increase in Al content may be required (to ˜20%for y=0.53, compared to −8% for y=0.48). Other(Al_(x)Ga_(1-x))_(1-y)In_(y)P materials, where y>0.48, may also beengineered to have a desired large lattice constant to reduce thetemperature dependence.

FIG. 2 is a cross-sectional view of one embodiment of an LED 18 wherethe active layer has a composition of (Al_(x)Ga_(1-x))_(0.47)In_(0.53)P(lattice constant is larger than that of GaAs). In FIG. 2, a substrate19 has a growth layer 20 formed thereon. Various engineered growthlayers and substrates are described below for growing the LED layers.The growth layer 20 has the same or approximately the same latticeconstant as the overlying layers, including the active layer. An InGaPbuffer layer 21 is grown over the growth layer 20. A lower confininglayer 22 of n-type AlInP is grown on the buffer layer 21. The AlInPconfining layer 22 has a band gap that is higher than the band gap ofthe active layer. An active layer 24 of(Al_(x)Ga_(1-x))_(0.47)In_(0.53)P, which may comprise a plurality oflayers, is grown over the confining layer 22. A p-type upper confininglayer 26 of AlInP is grown over the active layer 24. A highly dopedp-type AlInGaP contact layer may be provided over layer 26. A p-metalelectrode and an n-metal electrode are formed in electrical contact withthe p and n-type confining layers, respectively, for forward biasing theLED and injecting electrons and holes into the active layer 24 forradiative recombination.

The Al content in the active layer 24 is selected for the desiredvisible wavelength (e.g., red through green).

The relatively large lattice constant of the AlInP confining layerscauses the band gap energy of the confining layers to slightly decrease(e.g., by ˜12 meV) as compared to AlInP with a lattice constant equal tothat of GaAs. Although this reduces the effectiveness of the confininglayers in confining the injected carriers to the active layer, theincreased direct band gap recombination due to the larger latticeconstant of the active layer more than offsets this drawback.

FIG. 3 is a graph showing the predicted reduced temperature dependenceof the (Al_(x)Ga_(1-x))_(1-y)In_(y)P LED when y has been increased from0.48 to 0.53. The external and internal quantum efficiencies are plottedvs. the p-n junction temperature.

The composition of the AlInGaP active layer need not be selected toprecisely match that of the enlarged-lattice constant of the otherAlInGaP epitaxial layers in the stack (e.g., y in the active layer neednot equal y in the underlying layers). For example, if the AlInGaPactive layer is very thin (or formed of a plurality of thin layers), thecomposition of the AlInGaP active layer may be selected such that theactive layer is stressed or strained, without having unacceptabledefects, since its lattice constant is constrained to the enlargedlattice constant of the epitaxial growth layers beneath. That is, theactive light emitting layers or other layers within the active regionmay be provided under tensile or compressive strain with respect to theunderlying AlInGaP epitaxial layers.

FIG. 4 is a diagram of energy gap vs. lattice constant for constituentmaterials that make up the (Al_(x)Ga_(1-x))_(1-y)In_(y)P system. Thelattice constant of the preferred AlInGaP material is greater than 5.65Å and less than about 5.73 Å. This corresponds to a region from y>0.48to y<0.66 if the AlInGaP active layer is not stressed or strained.

FIG. 5 illustrates one method to form an AlInGaP active layer with alattice constant greater than that of GaAs. FIG. 5 shows across-sectional view of a starting GaAs substrate 40, having a latticeconstant of 5.65 Å. To create a growth layer with a larger latticeconstant (e.g., up to 5.73 Å), a graded In_(x)Ga_(1-x)As buffer layer 42is grown on the GaAs substrate 40 until the lattice constant is the sameas that desired for the AlInGaP LED layers. In one example, x is gradedfrom 0 to 0.08 over a thickness of approximately 1 micron to achieve alattice constant of 5.69 Å. A maximum x is about 0.18. An x of 0.18 willachieve a lattice constant of about 5.73 Å.

In another embodiment, the graded layer is In_(y)Ga_(1-y)P, with indiumstarting at y=0.48 and increasing up to 0.66. A y of 0.66 will achieve alattice constant of about 5.73 Å. Details of growing a graded layer arefound in U.S. Pat. No. 6,232,138, incorporated herein by reference,which describes engineering a growth layer for forming light emittinglayers with new material systems, in particular AlInGaAs infrared lasersand transistors. In the present invention, the reason for engineeringthe growth layer is not for a new material system but for improvedtemperature sensitivity for a commonly used material system.

To reduce residual strain, the percentage of In increases to a pointslightly below the top surface of the graded layer then is reduced by asmall amount for the remainder of the thickness to achieve the intendedlattice constant at the top surface.

After the desired In_(x)Ga_(1-x)As buffer layer is grown to enlarge thelattice constant, a uniform cap layer 43 of InGaAs (or InGaP) may begrown to reduce defect density. The uniform layer 43 may have an Incomposition slightly less than that of the maximum In compositionachieved within the graded buffer layer 42. An InGaP buffer layer 44 isthen grown followed by an n-type AlInP confining layer 46. If the gradedbuffer layer 42 is In_(y)Ga_(1-y)P, the cap layer 43 may be the InGaPbuffer layer 44. A light-emitting AlInGaP LED active layer 48 is thengrown having the desired enlarged lattice constant, such as(Al_(x)Ga_(1-x))_(0.47)In_(0.53)P for emitting visible red light orshorter wavelengths. The suitable indium content in the active layer fora particular growth layer (e.g., cap or graded layer) may have a range,as opposed to only a single suitable amount, if a strained or stressedactive layer is acceptable. In one embodiment, the wavelength is between630 nm (red) and 560 nm (green). A p-type AlInP upper confining layer 50is then grown. A highly doped p-type (Al,In,Ga)P contact layer may thenbe provided over layer 50. Other compositions of confining layers mayalso be used.

Optionally, a thick (˜5 to 100 um) transparent window layer, for exampleGaP, AlGaP, or AlGaAs, may be grown above the AlInGaP LED layers. Thislayer provides increased light extraction and current spreading for theLED devices, and is not required to be latticed matched to theunderlying layers.

Suitable n and p metal contacts are then formed on the top and bottomsurfaces. The wafer is diced, and chips are mounted into packages toform operable LEDs. One method of forming an AlInGaP LED is described inU.S. Pat. No. 6,525,335 to Krames et al., incorporated herein byreference.

The lattice constant of the LED layers may differ slightly from that ofthe uniform cap layer 43 without incurring unacceptable defects.

If the GaAs substrate 40 and graded InGaAs layer 42 (or graded InGaPlayer) are to be used for conducting current to the n side of the pnjunction, those materials would be n-doped. Alternatively, thelight-absorbing GaAs and InGaAs materials may be removed and replaced bya transparent substrate bonded below the lower confining layer 46. Inthis case, a fully transparent LED chip is possible. In one embodiment,the p and n layers are electrically contacted by metal layers on thesame side of the chip to form a flip chip, where the p and n-metalcontacts are then directly bonded to a submount. A flip chip isdescribed in U.S. Pat. No. 6,274,399 to Kern et al., incorporated hereinby reference. The LED chips may be shaped to provide increased lightextraction.

FIGS. 6A-6F illustrate an alternative method to engineer a growth layerhaving a lattice constant matched to the lattice constant of the desiredactive layer composition, such as (Al_(x)Ga_(1-x))_(0.47)In_(0.53)P. Aspreviously mentioned, the suitable indium content of thin layers withinthe LED epitaxial structure may be within a range while still allowingthe thin layers to have approximately the same lattice constant as thebase epitaxial layers and growth layer. That is, such thin layers may beunder tensile or compressive strain. A particular example is the use ofa reduced-In active light emitting layer or layers in order to provide areduction in the required Al content of such layers for producing acertain wavelength of light.

In FIG. 6A, a GaAs substrate 60 (lattice constant=5.65 Å) has grown overit by MOCVD or MBE a very thin layer of InGaP or InGaAs 62. The indiumcontent of layer 62 is selected so that, if layer 62 were released fromthe GaAs substrate 60, its lattice constant would be greater than 5.65Å, and preferably in the range of 5.66 to 5.73 Å. This lattice-matchrequirement corresponds to a range of 0.48<y<0.66 for In_(y)Ga_(1-y)P,and 0<x<0.18 for In_(x)Ga_(1-x)As. The thickness of this layer is chosento be low enough so that it is below the critical thickness wheredislocations would be generated. In one embodiment, the composition oflayer 62 is In_(0.18)Ga_(0.82)As and its thickness is about 100 Å. Bygrowing a very thin InGaP or InGaAs layer 62, the layer is strained(compressed) to have a lattice constant of 5.65 Å but there are fewdefects. Thicknesses greater or less than 100 angstroms may be used aslong as the defect densities are within an acceptable range (i.e.,critical thickness limitation not exceeded).

In FIG. 6B, hydrogen 64 is implanted into the top surface of the GaAssubstrate 60 in order to form a bubble layer. In one embodiment, H+ ionsare implanted with an energy of 125 keV with an implantation dose of8×10E16/cm².

In FIG. 6C, a carrier substrate 66 (e.g., silicon) has an oxide bondinglayer 68 formed (thermally grown or deposited) on its surface to athickness of about 0.1 to 2 microns. The carrier substrate 66 may be anymaterial, including a transparent substrate.

In FIG. 6D, the two wafers are brought into contact, and the InGaP orInGaAs layer 62 is bonded to the oxide layer 68 layer. If the layer 62and oxide layer 68 are sufficiently flat, the two layers will bond at anelevated temperature under pressure.

In FIG. 6E, the bonded wafers are heated to about 500 degrees C orhigher in an inert atmosphere to cause the hydrogen gas to expand anddelaminate the thin InGaP or InGaAs layer 62 from the GaAs substrate 60.Since the oxide 68 is not rigid, the layer 62 will relax (expand) toincrease to its relaxed lattice constant between 5.66 and 5.73 Å. Theremaining structure becomes a new growth substrate, with a new(different) lattice constant compared to the original GaAs substrate.

The oxide bonding layer 68 is optional if the wafer bonded interfaceallows the InGaP or InGaAs layer 62 to sufficiently relax.

In FIG. 6F, the thin InGaP or InGaAs buffer layer 62 is optionallyextended by growth (to stabilize the layer 62) followed by growing ann-type InGaP buffer layer 70, whose In amount is selected to create alattice-matched buffer layer. Other compositions may be suitable for thebuffer layer. AlInGaP LED confining and active layers 22, 24, 26(previously described with respect to FIGS. 2 and 5) are grown on thebuffer layer 70, whereby the AlInGaP active region 24 is lattice matchedto the InGaP or InGaAs layer 62 (acting as a substrate). Some layers,especially within the active region, may be slightly under tensile orcompressive strain. An optional highly doped AlInGaP p contact layer 71may be provided above the p confining layer.

One or more of the carrier substrate 66, oxide layer 68, and growth andbuffer layers 62 and 70 (which typically absorb light) may be removedby, for example, etching, grinding, or lapping, along with other layers,and a transparent substrate (e.g., GaP or SiC) may be bonded to then-layer 22 using heat and pressure. Bonding a transparent substrate isdescribed in U.S. Pat. No. 5,376,580 to Kish et al., incorporated byreference.

While the above embodiments specify InGaP or InGaAs as the growth layer62, it is also possible to have the growth layer be AlInGaP. In fact, itis possible to choose a composition of AlInGaP that provides the desiredlattice constant while also remaining transparent to light emitted fromactive layer 24. When this is the case, carrier substrate 66 may also bechosen to be transparent (suitable substrates include GaP, sapphire,SiC, etc.). In such a case, the substrate, oxide, and growth layers mayremain in the device structure, and the LED can be fabricated as aflip-chip device with light collected through the transparent substrate(e.g., FIG. 9B but without the separation of layers 66, 68, 62,70).

The lift-off technique of FIGS. 6A-6F may also be used in III-V materialsystems (e.g., GaN) to engineer growth layers having desirable latticeconstants.

FIG. 7A illustrates the structure of FIG. 6F with a thick (˜5 to 100 um)transparent window layer 73, for example GaP, AlGaP, or AlGaAs, grownabove the p+ AlInGaP contact 20 layer 71. This layer 73 providesincreased light extraction and current spreading for the LED device. Tofurther improve light extraction, the light-absorbing carrier substrate66, oxide layer 68, InGaAs layer 62, and InGaP layer 70 are removed bylapping, grinding, etching or other suitable process. As shown in FIG.7B, a transparent substrate 76 (e.g., n-GaP) is then bonded to then-AlInP layer 22 using pressure and heat. A p-electrode 78 is thenformed on 25 the conductive window layer 73, and an n-electrode 79 isformed on the conductive transparent substrate 76. In one embodiment,the n-electrode 79 includes a reflective layer (e.g., Au or Ag) so as toact as a mirror to reflect light through the window layer 73. Thep-electrode 78 is formed so as to not block a significant amount oflight. The p-electrode 78 may be made transparent by forming a very thinlayer of metal (e.g., gold), or the p-electrode 78 may be formed to takeup little surface area.

FIGS. 8A and 8B illustrate an embodiment, where, instead of forming awindow layer, a reflective layer is formed, identified asmirror/reflective contact 80. Mirror/reflective contact 80 may be areflective metal, such as silver, or a distributed Bragg reflector(DBR). A support substrate 82 is wafer-bonded to the layers. The supportsubstrate 82 may be any conductive material with a suitable thermalcoefficient such as GaAs, Si, GaP, SiC, or metals such as molybdenum,copper, copper-tungsten or other metals or alloys thereof. The metalmirror may be deposited on the LED layers, or the metal mirror may firstbe deposited on the support substrate 82 prior to wafer-bonding.Suitable p and n electrodes 78, 79 are then formed. Themirror/reflective contact 80 reflects light upwards and out of the LEDto increase light extraction.

Instead of grinding, lapping, or etching away the carrier substrate 66,a lift-off technique may be used. In such a process, the oxide layer 68is etched using a wet etchant, such as HF, to lift off the overlyingstructure.

Lift-off materials other than oxide may be used. A silicon-on-insulator(SOI) technique using implanted hydrogen as a delamination layer isdescribed in U.S. Pat. No. 6,372,609, incorporated herein by reference,and certain process details described in that patent may be applicableto the present technique.

FIGS. 9A-9C illustrate how the LED structure can be formed as a flipchip, with both contacts on the same side. In FIG. 9A layers 24, 26, and71 are etched to expose the n-AlInP confining layer 22 for electricalcontact. A metal n-electrode 83 is then formed to electrically contactthe n-AlInP confining layer 22, and a p-electrode 84 is formed tocontact the p+ AlInGaP layer 71.

In FIG. 9B, the p and n-electrodes are bonded to metal pads 85 and 86,on the package element 87. The carrier substrate 66 and layers 68, 62,and 70 may be removed after bonding the electrodes to the packageelement 87. Vias 88, 89 electrically couple the pads 85, 86 to p andn-electrodes 90, 91 on the package element 87. Electrodes 90, 91 may besoldered to pads on a circuit board or to pads on another package.

In FIG. 9C, the top surface of the LED (the n-AlInP layer 22 in theexample) is further processed to have light extraction features 92. Suchfeatures may include roughening or other techniques, such as orderedtexturing or a photonic crystal structure, to increase the light output.

In all of the embodiments, a Distributed Bragg Reflector (DBR) stack maybe formed within the LED structure to reflect light emitted by theactive layer. For example, in FIGS. 7-9, a DBR stack, may be formedabove or below the active layer 24, or below and above for a resonantcavity LED. The DBR is tuned to reflect the wavelength of emitted light.

The above-described processes are used to create less temperaturesensitive AlInGaP LEDs emitting visible red light. The above techniquescan also be used to produce AlInGaP LEDs emitting yellow to green light.

Although some examples presented herein specify a certain compositionand lattice constant of the AlInGaP materials, such specifiedcompositions and lattice constants are not required for the invention.For example, y may range from 0.48 to 0.66, and x may range from 0 to1.0.

The LED structures described above may be packaged in a surface mountpackage or in any other package. FIG. 10 is an exploded view of oneembodiment of a surface mount package. An LED die 93 is mounted on asubmount 94. A metal heat-sinking slug 95 and reflector cup 96 areplaced into a molded leadframe 98. The molded leadframe 98 is, forexample, a filled plastic material molded around metal leads 100, 101that provide an electrical path to the p and n metal contacts on die 93.The bottom surface of submount 94 is bonded to slug 95. A wire (notshown) is bonded between the top p-metal of die 93 (assuming the LED isnot a flip chip) and metal lead 100, and a wire (not shown) is bondedbetween the metal slug 95 and metal lead 101 for electrical connectionto the n-layers. An optical lens 104 may be added. Slug 95 is exposedthrough the bottom of leadframe 98 so as to directly contact a heat sinkon which the package is mounted, such as an electrically insulatedaluminum circuit board.

Many other types of packages may be used.

While particular embodiments of the present invention have been shownand described, it will be obvious to those skilled in the art thatchanges and modifications may be made without departing from thisinvention in its broader aspects and, therefore, the appended claims areto encompass within their scope all such changes and modifications asfall within the true spirit and scope of this invention.

1. A light emitting device comprising: a light emitting diode (LED)portion comprising: a first (Al_(x)Ga_(1-x))_(1-y)In_(y)P epitaxiallayer of a first conductivity type formed on a growth layer, the growthlayer having a lattice constant greater than that of GaAs; an activelayer epitaxially grown over the first (Al_(x)Ga_(1-x))_(1-y)In_(y)Pepitaxial layer, wherein the active layer comprises one or more layersof material comprising any combination of Al, Ga, In, and P, such thatthe active layer has a lattice constant greater than the latticeconstant of GaAs and approximately equal to the lattice constant of thegrowth layer, and wherein the active layer emits visible light; and asecond epitaxial layer of a second conductivity type grown over theactive layer.
 2. The device of claim 1 wherein 0≦x≦1.0, and y>0.48. 3.The device of claim 1 wherein the growth layer comprises an epitaxiallayer formed on a graded InGaAs layer.
 4. The device of claim 1 whereinthe growth layer comprises an epitaxial layer formed on a graded InGaPlayer.
 5. The device of claim 1 wherein the growth layer comprises anepitaxial layer of InGaP or InGaAs grown over a GaAs substrate, wherethe InGaP or InGaAs layer was strained when overlying the GaAs substratethen relaxed to expand its lattice constant when released from the GaAssubstrate.
 6. The device of claim 1 wherein the active layer is notstrained.
 7. The device of claim 1 wherein the active layer is strained.8. The device of claim 1 wherein the first epitaxial layer is an n-typeconfining layer, and the second epitaxial layer is a p-type confininglayer.
 9. The device of claim 1 wherein the first epitaxial layer is anAlInP confining layer, and the second epitaxial layer is an AlInPconfining layer.
 10. The device of claim 1 further comprising areflective material overlying the second epitaxial layer.
 11. The deviceof claim 1 further comprising a transparent window layer overlying thesecond epitaxial layer.
 12. The device of claim 1 wherein the growthlayer is an InGaP layer epitaxially grown over a GaAs substrate.
 13. Thedevice of claim 1 wherein the growth layer is an InGaAs layerepitaxially grown over a GaAs substrate.
 14. The device of claim 1wherein the device further comprises the growth layer.
 15. The device ofclaim 1 wherein y equals approximately 0.53.
 16. The device of claim 1wherein the lattice constant of the active layer is greater than 5.66 Å.17. The device of claim 1 wherein the lattice constant of the activelayer is between 5.66 Å and 5.73 Å.
 18. The device of claim 1 whereinthe visible light is red light.
 19. The device of claim 1 wherein thevisible light is yellow light.
 20. The device of claim 1 wherein thevisible light is green light.
 21. The device of claim 1 wherein thegrowth layer comprises an In_(x)Ga_(1-x)As epitaxial layer, where0<x<0.18.
 22. The device of claim 1 wherein the growth layer comprisesan In_(y)Ga_(1-y)P epitaxial layer, where 0.48<y<0.66.
 23. The device ofclaim 1 further comprising at least one intervening epitaxial layerbetween the first epitaxial layer and the active layer.
 24. The deviceof claim 1 further comprising at least one intervening epitaxial layerbetween the active layer and the second epitaxial layer.
 25. The deviceof claim 1 wherein the active layer has a first surface and an opposingsecond surface, the device further comprising a window layer formedopposing the first surface of the active layer and a bonded substrateopposing the second surface of the active layer.
 26. The device of claim1 further comprising: a substrate; and a reflector between the substrateand the active layer.
 27. The device of claim 1 further comprising atleast one reflector opposing at least one surface of the active layer.28. A method comprising: providing a crystalline growth layer over afirst substrate, the growth layer having a lattice constant greater thanthe lattice constant of GaAs; and growing light emitting diode (LED)layers overlying the growth layer, the LED layers comprising a first(Al_(x)Ga_(1-x))_(1-y)In_(y)P epitaxial layer of a first conductivitytype, a second epitaxial layer of a second conductivity type, and anactive layer disposed between the first and second epitaxial layers, theactive layer comprising one or more layers of material comprising anycombination of Al, Ga, In, and P, wherein the active layer has a latticeconstant greater than the lattice constant of GaAs and approximatelyequal to the lattice constant of the growth layer, and wherein theactive layer emits visible light.
 29. The method of claim 28 wherein0≦x≦1.0, and y>0.48.
 30. The method of claim 28 wherein forming acrystalline growth layer comprises forming a graded InGaAs layer on aGaAs substrate while increasing the amount of indium until a desiredlattice constant, greater than the lattice constant of GaAs, isobtained.
 31. The method of claim 28 wherein forming a crystallinegrowth layer comprises forming a graded InGaP layer on a GaAs substratewhile increasing the amount of indium until a desired lattice constant,greater than the lattice constant of GaAs, is obtained.
 32. The methodof claim 28 wherein forming a crystalline growth layer comprises:growing an epitaxial layer comprising InGaP, InGaAs, or AlInGaP over aGaAs substrate, where the epitaxial layer is strained when overlying theGaAs; implanting hydrogen into the GaAs substrate to act as adelamination layer; bonding the epitaxial layer to the first substrate;heating the GaAs substrate so that the hydrogen causes the epitaxiallayer to delaminate from the GaAs substrate, whereby the strainedepitaxial layer relaxes to expand its lattice constant when releasedfrom the GaAs substrate, the relaxed epitaxial layer comprising thegrowth layer.
 33. The method of claim 32 further comprising: forming abonding layer over the first substrate; wherein bonding the epitaxiallayer to the first substrate comprises bonding the epitaxial layer tothe bonding layer;
 34. The method of claim 28 wherein the firstepitaxial layer is an n-type confining layer, and the second epitaxiallayer is a p-type confining layer.
 35. The method of claim 28 whereinthe first epitaxial layer is an AlInP confining layer, and the secondepitaxial layer is an AlInP confining layer.
 36. The method of claim 28further comprising forming a reflective material overlying the secondepitaxial layer.
 37. The method of claim 28 wherein the first substrateis a GaAs substrate, and wherein the growth layer is an InGaP layerepitaxially grown over the GaAs substrate.
 38. The method of claim 28wherein the first substrate is a GaAs substrate, and wherein the growthlayer is an AlInGaP layer epitaxially grown over the GaAs substrate. 39.The method of claim 28 wherein the first substrate is a GaAs substrate,and wherein the growth layer is an InGaAs layer epitaxially grown overthe GaAs substrate.
 40. The method of claim 28 wherein y equalsapproximately 0.53.
 41. The method of claim 28 wherein the latticeconstant of the active layer is greater than 5.66 Å.
 42. The method ofclaim 28 wherein the lattice constant of the active layer is between5.66 Å and 5.73 Å.
 43. The method of claim 28 wherein the growth layercomprises an In_(x)Ga_(1-x)As epitaxial layer, where 0<x<0.18.
 44. Themethod of claim 28 wherein the growth layer comprises an In_(y)Ga_(1-y)Pepitaxial layer, where 0.48<y<0.66.
 45. The method of claim 28 furthercomprising growing at least one intervening epitaxial layer between thefirst epitaxial layer and the active layer.
 46. The method of claim 28further comprising growing at least one intervening epitaxial layerbetween the active layer and the second epitaxial layer.
 47. The methodof claim 28 further comprising removing the growth layer and firstsubstrate, leaving a remaining structure.
 48. The method of claim 47further comprising bonding a transparent substrate to the remainingstructure.
 49. The method of claim 28 further comprising: providing areflective layer facing a surface of the active layer; and removing thegrowth layer and first substrate.
 50. The method of claim 28 furthercomprising forming a window layer over a surface of the active layer.51. The method of claim 28 further comprising: forming electricalcontacts on a same side of the active layer to form a flip chip LEDdevice; and removing the growth layer and first substrate.
 52. Themethod of claim 28 wherein the first substrate is transparent.
 53. Amethod comprising: providing a substrate comprising: a host; and a III-Vseed layer bonded to the host, wherein the III-V seed layer comprises atleast three elements from group III and group V; and growing a pluralityof III-V layers on the seed layer.
 54. The method of claim 46 whereinthe substrate further comprises a bonding layer disposed between thehost and the III-V seed layer.
 55. The method of claim 46 wherein alattice constant of the III-V seed layer matches a lattice constant ofat least one of the plurality of III-V layers grown on the seed layer.56. The method of claim 46 wherein the seed layer is a III-nitridelayer.
 57. The method of claim 46 wherein providing a compound substratecomprises: growing the III-V seed layer on a growth substrate, whereinthe III-V seed layer is strained; bonding the strained III-V layer tothe host; and removing the growth substrate; wherein the III-V layer atleast partially relaxes when the growth substrate is removed.